www. mccsemi .com mbr 1 0150ct 1 0 a m p h i gh v o l t ag e features h ig h j u nc t io n t em p er at u re c a pa b i l it y g oo d t ra d e o ff b et we en l ea k ag e c ur r e n t a n d f or w a r d v ol a ge d ro p l ow l e a ka ge c urr e nt mcc catalog number maximum r e current peak reverse voltage maximum rms voltage maximum dc blocking voltage m b r 1 0 15 0 ct 15 0 v 10 5 v 150 v electrical characteristics @ 2 5 c unless otherwise specified average forward current i f(av) 1 0 a t c = 1 5 5 c peak forward surge current i fsm 1 2 0 a 8.3 ms ha l f si ne maximum instantaneous forward voltage m b r 1 0 1 5 0 ct v f . 9 2 v mcc * pulse test: pulse width 38 0 m sec, duty cycle 2 % i fm = 5 a t j = 2 5 c i n c h es m m
a . 600 . 62 0 1 5.25 1 5 . 75 b . 3 93 . 4 09 10.00 1 0 . 40 n 0 . 1 0 2 t y p . 2 . 6 t y p . pin 1 pin 3 pin 2 case a b c k j i h g f e d n m l h 15 0 v ol ts to - 22 0a b p i n 13 maximum ratings operating j u n c t i o n temperature : 1 5 0 c storage temperature: - 50 c to + 1 5 0 c p er d i o de thermal resistance 4 c/w junction to ca se
om p on ent s 21 20 1 i t a sc a s t ree t ch at s w or th ! " # $
% ! " # c .104 .116 2.65 2.95 d .244 . 259 6.20 6.60 e .356 . 361 9.05 9.15 f .137 .154 3.50 3.93 g .511 . 551 13.00 14.00 h .094 . 106 2.40 2.70 i . 024 .034 0.61 0.88 j .019 . 027 0.49 0.70 k .147 . 151 3.75 3.85 l .173 . 181 4.40 4.60 m .048 . 051 1.23 1.32 t o ta l thermal resistance 2. 4 c/w junction to case b a rr ie r r e ct i f ie r p o we r s c h ot tk y maximum reverse current at rated dc blocking voltage i r 50 m a t j = 25 c 7 m a t j = 1 25 c v f . 75v i f m = 5 a t j = 1 25 c
ww w . mccsemi .com m br10150ct 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 if(av) (a) pf(av)(w) d = 0.05 d = 0.1 d = 0.2 d = 0.5 d = 1 t d =tp/t tp fig. 1: average forward power dissipation versus average forward current (per diode). 0 2 5 5 0 7 5 100 125 150 175 0 1 2 3 4 5 6 tamb(c) if(av)(a) rth(j-a)=rth(j-c) rth(j-a)=15c/w t d =tp/t tp fig. 2: average forward current versus ambient temperature ( d = 0.5, per diode). 1e-3 1e-2 1e-1 1e+0 0 10 20 30 40 50 60 70 80 t(s) im(a) tc=50c tc=75c tc=125c i m t d =0.5 fig. 3: non repetitive surge peak forward current versus overload duration (maximum values, per diode). 1e-3 1e-2 1e-1 1e+0 0.0 0.2 0.4 0.6 0.8 1.0 tp(s) zth(j-c)/rth(j-c) d = 0.5 d = 0.2 d = 0.1 single pulse t d =tp/t tp fig. 4: relative variation of thermal impedance junction to case versus pulse duration (per diode). 0 2 5 50 75 100 125 150 1e-2 1e-1 1e+0 1e+1 1e+2 1e+3 1e+4 1e+5 vr(v) ir(a) tj=75c tj=25c tj=125c tj=150c tj=175c fig. 5: reverse leakage current versus reverse voltage applied (typical values, per diode) 1 2 5 10 20 50 100 200 10 20 50 100 200 vr(v) c(pf) f=1mhz tj=25c fig. 6: junction capacitance versus reverse voltage applied (typical values, per diode). mcc
ww w . mccsemi .com m br10150ct 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.1 1.0 10.0 100.0 vfm(v) ifm(a) tj=125c tj=25c tj=125c typical values fig. 7: forward voltage drop versus forward current (maximum values, per diode). 0 2 4 6 8 101214161820 0 10 20 30 40 50 60 70 80 s(cm2) rth(j-a) (c/w) fig. 8: thermal resistance junction to ambient versus copper surface under tab (epoxy printed circuit board, copper thickness: 35m) (stps10150cg only). mcc
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